SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN GAAS OBSERVED BY ATOMIC-FORCE MICROSCOPY

Steps of monolayer height (0.28 nm) are observed by atomic force micro scope on a metalorganic vapor phase epitaxy grown GaAs surface. Monola yer terrace width was found to be as large as 430 nm, the same as the vicinal substrate surface. The growth mechanism is according to the cl assical Burton-Cabrera-Frank theory. We may have a larger (> 500 nm) t errace width and surface diffusion length if an exactly oriented [100] substrate is used.