PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION

Citation
M. Mclaughlin et al., PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION, Applied physics letters, 63(14), 1993, pp. 1865-1867
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
14
Year of publication
1993
Pages
1865 - 1867
Database
ISI
SICI code
0003-6951(1993)63:14<1865:POZTPB>2.0.ZU;2-R
Abstract
Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS t arget using a KrF laser, has produced a high rate deposition method fo r growing luminescent thin films. Good stoichiometric quality and typi cal luminescent crystal structures have been observed with a predomina nt hexagonal phase and little evidence of the cubic phase. The lumines cent characteristics were determined by cathodoluminescence and photol uminescence excitation and stable electroluminescence was observed und er pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD fi lm characteristics are compared with those observed in radio-frequency sputtered samples.