GROWTH AND FERROELECTRIC PROPERTIES OF BI2VO5.5 THIN-FILMS WITH METALLIC LANIO3 ELECTRODES

Citation
Kvr. Prasad et al., GROWTH AND FERROELECTRIC PROPERTIES OF BI2VO5.5 THIN-FILMS WITH METALLIC LANIO3 ELECTRODES, Applied physics letters, 63(14), 1993, pp. 1898-1900
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
14
Year of publication
1993
Pages
1898 - 1900
Database
ISI
SICI code
0003-6951(1993)63:14<1898:GAFPOB>2.0.ZU;2-P
Abstract
Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposi ted on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/Bvo/ LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c-oriented (0 01) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance approximately 20 OMEGA in addition to aiding c-a xis oriented BVO growth. The dielectric constant, epsilon(r) of LNO/BV O/LNO/STO, at 300 K was about 12. However, when an Au electrode was us ed on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (epsilon(r) = 123). The ferroelectric properti es of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, P(r) = 4.6 X 10(-8) C/cm2 and coercive field, E (c) = 23 kV/cm at 300 K.