ELECTRON-SPIN-RESONANCE INVESTIGATIONS OF OXIDIZED POROUS SILICON

Authors
MEYER BK PETROVAKOCH V MUSCHIK T LINKE H OMLING P LEHMANN V
Citation
Bk. Meyer et al., ELECTRON-SPIN-RESONANCE INVESTIGATIONS OF OXIDIZED POROUS SILICON, Applied physics letters, 63(14), 1993, pp. 1930-1932
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
14
Year of publication
1993
Pages
1930 - 1932
Database
ISI
SICI code
0003-6951(1993)63:14<1930:EIOOPS>2.0.ZU;2-7
Abstract
The defect properties of rapidly thermally oxidized porous silicon are studied by electron paramagnetic resonance. Two different types of de fects can be distinguished. One is very similar to the defects observe d in damaged crystalline or amorphous Si, whereas the second one is cl osely related to the P(b), center. A maximum defect density of 8 X 10( 18) cm-3 is observed for samples annealed at about 600-degrees-C. The intensity of the photoluminescence band at 1.7 eV anticorrelates with the density of the defects.