LOW-ENERGY (100 EV) C-BEAM AND MOLECULAR-BEAM EPITAXIAL TECHNOLOGY( ION DOPING INTO GAAS USING COMBINED ION)

Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (T(g)) ran ge between 500 and 590-degrees-C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measur ements. In the PL spectra, two well-established specific emissions, '' g'' and [g-g], which are closely related to acceptor impurities, were observed for the above T(g) range. The results indicate that carbon wa s both optically and electrically well activated as an acceptor even a t T(g) as low as 500-degrees-C. Maximum net hole concentration, \N(A)- N(D)\, as high as 3 X 10(18) cm-3 was obtained with no appreciable rad iation damages and undesired impurity contamination.