LOW-ENERGY AR-INDUCED MODIFICATION OF SURFACE ATOMIC BOND LENGTHS ON INP(100) WAFER( ION BOMBARDMENT)

We report the first direct measurement of surface interatomic bond dis tance modifications due to ion bombardment. The experiments were perfo rmed using low energy Ar+ ion on a InP(100) surface by photoemission x -ray absorption fine structure. The structural changes are sputtering time dependent and result in first (P-In) and second (P-P) surface bon d distances relaxation approaching the bulk values. It suggests that, prior to bond breaking, the Ar+ ion beam first stretches atomic bond l engths during a precursor stage, with small energy and momentum transf er. This work brings new insights into the knowledge of ion sputtering various micromechanisms which is relevant for surface preparation.