WETTABILITY AND INTERFACIAL BONDING IN AU-SI SIC SYSTEM/

Using the sessile drop method under vacuum, the wettability of monocry stalline alpha-SiC by Au-Si alloys is studied at 1373 K. Additions of Si to Au lead to a strong decrease of the contact angle from theta >> 90-degrees to theta << 90-degrees. This effect is obtained without sig nificant reactivity and is due to adsorption of Si at the Au/SiC inter face, with the formation of a strong chemical bond localised at the in terface. Experimental evidence is given showing that oxygen, present i n the furnace as an impurity, reinforces the beneficial effect of Si o n wetting and can lead to nearly perfect wetting.