SINGLE-CRYSTAL WURTZITE GAN ON (111) GAAS WITH ALN BUFFER LAYERS GROWN BY REACTIVE MAGNETRON SPUTTER-DEPOSITION

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs u sing AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzit e GaN is obtained on (111) GaAs at temperatures between 550 and 620-de grees-C. However, using a high temperature 200 angstrom AlN buffer lay er epitaxial GaN is produced. Crystal structure and quality are measur ed using x-ray diffraction (XRD), reflection electron diffraction (RED ), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AIN buffer layers b y any growth technique. Simple AlN/GaN heterostructures grown by rf re active sputter deposition on (111) GaAs are also demonstrated.