RUO2 FILMS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Pure and conducting RuO2 thin films were successfully deposited on Si, SiO2/Si, and quartz substrates at temperatures as low as 550-degrees- C by a hot wall metal-organic chemical vapor deposition (MOCVD). Bis(c yclopentadienyl)ruthenium, Ru(C5H5)2, was used as the precursor. An op timized MOCVD process for conducting RuO2 thin films was established. Film structure was dependent on MOCVD process parameters such as bubbl er temperature, dilute gas flow rates, deposition temperature, and tot al pressure. Either pure RuO2, pure Ru, or a RuO2 + Ru mixture was obt ained under different deposition conditions. As-deposited pure RuO2 fi lms were specular, crack-free, and well adhered on the substrates. The Auger electron spectroscopy depth profile showed good composition uni formity across the bulk of the films. The MOCVD RuO2 thin films exhibi ted a resistivity as low as 60 muOMEGA-cm. In addition, the reflectanc e of RuO2 in the NIR region had a metallic character.