ENERGETIC BEAM-INDUCED SURFACE SEGREGATION DURING DEPOSITION

The energetic beam-induced surface segregation of metal (Cu thin film) /metal (Ag substrate) structure irradiated by energetic atom and ion b eams has been observed. It has been found that Ag was segregated onto the surface of Cu film (about 15 nm in thickness deposited under UHV) during the ion beam deposition and irradiation of the deposited film a fterwards. The energy of the Ar+ ion beam used both tor sputter- depos ition and irradiation ranged over several keV. All the measurements we re made with a PHI-590 scanning Auger microprobe at room temperature a t a base pressure of about 6 x 10(-8) Pa. During sputter-deposition th e Ag enrichment is greater the higher the energy of the sputtering ion beam used. This kinetic energy influence of deposited atom on the deg ree of segregation is interesting as the average energy of atoms sputt ered with an ion beam energy of 2-4 keV is several eV and their energy difference should be in the range 10(-1)-1 eV. The deposited film sho ws greatest enrichment of Ag when it is irradiated by an Ar+ ion beam with keV energy.