NOISE-FREE ANODIZATION PROFILES OF MULTILAYER STRUCTURES USING AN EVAPORATED SILICON MONOXIDE MASK

Citation
Ms. Goodchild et Rj. Bennett, NOISE-FREE ANODIZATION PROFILES OF MULTILAYER STRUCTURES USING AN EVAPORATED SILICON MONOXIDE MASK, International journal of electronics, 75(4), 1993, pp. 781-786
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00207217
Volume
75
Issue
4
Year of publication
1993
Pages
781 - 786
Database
ISI
SICI code
0020-7217(1993)75:4<781:NAPOMS>2.0.ZU;2-#
Abstract
In recent years, the anodization process has been developed into an an alytical tool for the assessment of multilayer structures. This is usu ally achieved by using a constant current supply and monitoring the gr owth of the oxide layer, through the multilayer, by measuring the incr ease in the voltage developed across the anodization cell. In this pap er, it is described how a silicon monoxide film has been used as the m asking material in order to overcome the problem of electrical breakdo wn of the mask. This enables noise free anodization profiles to be obt ained from multilayer structures.