A PYROELECTRIC MATRIX SENSOR USING PVDF ON SILICON-CONTAINING FET READOUT CIRCUITRY

Citation
Pca. Hammes et al., A PYROELECTRIC MATRIX SENSOR USING PVDF ON SILICON-CONTAINING FET READOUT CIRCUITRY, Sensors and actuators. A, Physical, 37-8, 1993, pp. 290-295
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
37-8
Year of publication
1993
Pages
290 - 295
Database
ISI
SICI code
0924-4247(1993)37-8:<290:APMSUP>2.0.ZU;2-4
Abstract
In this paper the performances of several nine-element infrared matrix sensors using the pyroelectric polymer PVDF are discussed. The improv ement of the sensitivity of the sensors, when using a diode instead of an integrated resistor for the biasing of the readout matrix, was exp erimentally verified. The sensitivity of the sensor covered by a 9 mum PVDF foil increased by a factor of 120 to 6 V/W at 20 Hz. Using a 25 mum foil the sensitivity increased even further to 40 V/W at 20 Hz. Th e S/N ratio improved by a factor of 30 to 70 dB at 20 Hz for an input infrared power of 1.5 mW. Also, a sensor using JFETs for readout was r ealized in a BIFET process. The performance of this matrix sensor was similar to that of the MOSFET matrix sensor.