INFLUENCE OF HYDROGEN ON ELECTRICAL CHARACTERISTICS OF POLY-SI RESISTOR

This paper shows that different amounts of hydrogen are absorbed into polycrystalline silicon (Poly-Si) film depending on its Structures suc h as oxide film under Poly-Si film and metallization pattern on Poly-S i film. We examined how hydrogen affected the conductive mechanism of Poly-Si film, and measured the absorption of hydrogen into Poly-Si fil m by elastic recoil detection analysis (ERDA). Our investigations reve aled that the change in Poly-Si film resistance was caused by a decrea se in trap density, which occurred when dangling bonds were filled wit h hydrogen. This hydrogen was due to diffusion of hydrogen in plasma-e nhanced chemical-vapor-deposited silicon nitride (P-SiN) film. It was confirmed that the absorption of hydrogen was the cause of the decreas e in resistance using ERDA.