FLOATING UP OF THE EXTENDED STATES OF LANDAU-LEVELS IN A 2-DIMENSIONAL ELECTRON-GAS IN SILICON MOSFETS

Citation
Aa. Shashkin et al., FLOATING UP OF THE EXTENDED STATES OF LANDAU-LEVELS IN A 2-DIMENSIONAL ELECTRON-GAS IN SILICON MOSFETS, JETP letters, 58(3), 1993, pp. 220-224
Citations number
13
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
58
Issue
3
Year of publication
1993
Pages
220 - 224
Database
ISI
SICI code
0021-3640(1993)58:3<220:FUOTES>2.0.ZU;2-9
Abstract
Phase diagram in H, N(s) plane for a 21) electron gas in Si MOSFET's h as been studied. It was found that transition to a low-electron-densit y insulating phase occurs only if all the extended states have passed, leaving Fermi sea through the Fermi level. In contrast to the case of high magnetic fields. when the extended states of each Landau level f ollow its center, in weak magnetic fields they float up and finally co mbine upon lowering the magnetic field.