A STRAIGHT DOMAIN BOUNDARY OF SINGLE-ATOM WIDTH ON A SI(111)-(7X7) SURFACE

Authors
WEI Y TSAI MH DOW JD TSONG IST
Citation
Y. Wei et al., A STRAIGHT DOMAIN BOUNDARY OF SINGLE-ATOM WIDTH ON A SI(111)-(7X7) SURFACE, Surface science, 296(1), 1993, pp. 120000015-120000020
Citations number
16
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
296
Issue
1
Year of publication
1993
Pages
120000015 - 120000020
Database
ISI
SICI code
0039-6028(1993)296:1<120000015:ASDBOS>2.0.ZU;2-9
Abstract
Using scanning tunneling microscopy (STM), we have observed an antipha se domain boundary of single-atom width on a Si(111)-(7 x 7) surface. The extra row of adatoms forming the boundary lies on the unfaulted ha lf of the 7 x 7 unit cell, in agreement with total energy calculations using the first-principles self-consistent pseudofunction method. The filled-state STM image shows a missing interior adatom on the unfault ed half, in agreement with calculations of the partial density of stat es of an adatom surrounded by three rest-atoms.