THIN METALLIC LAYERS IN SCANNING-TUNNELING-MICROSCOPY

Authors
Citation
G. Hormandinger, THIN METALLIC LAYERS IN SCANNING-TUNNELING-MICROSCOPY, Surface science, 296(1), 1993, pp. 1-8
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
296
Issue
1
Year of publication
1993
Pages
1 - 8
Database
ISI
SICI code
0039-6028(1993)296:1<1:TMLIS>2.0.ZU;2-8
Abstract
If a metallic overlayer is very thin, its surface electronic structure will be different from that of a thick slab of the same metal. Notabl y, surface band gaps and certain surface states need a minimum thickne ss of the crystal structure underneath to be fully developed. If the o verlayer thickness is less than that, then the surface electronic prop erties will be thickness-dependent. A metallic overlayer which is atom ically flat on the surface, but which covers a step in the interface, will have different electronic structures on the two sides of the step . This paper investigates if, and under what conditions, such a behavi our can be picked up by a scanning tunneling microscope (STM). This is done by calculating STM data for Ag/Pd(111), Ag/Pd(100), and Cu/Ni(10 0). The results show tip height changes in the order of 0.1 angstrom f or layer thicknesses of up to four monolayers.