AU IN PD TE PD OHMIC CONTACT TO N-GASB

Authors
YANG ZC HAO PH WANG LC
Citation
Zc. Yang et al., AU IN PD TE PD OHMIC CONTACT TO N-GASB, Electronics Letters, 32(25), 1996, pp. 2348-2349
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
25
Year of publication
1996
Pages
2348 - 2349
Database
ISI
SICI code
0013-5194(1996)32:25<2348:AIPTPO>2.0.ZU;2-S
Abstract
An Au/In/Pd/Te/Pd ohmic contact scheme has been developed to n-GaSb (n similar or equal to 10(18)cm(-3)). Annealed at 250 and 400 degrees C, this contact scheme exhibits excellent electrical properties (contact resistivity <10(-6) Ohm-cm(2)) and good thermal stability. The surfac e and interface morphologies were investigated using scanning electron microscope (SEM). The ohmic contact formation mechanism is also propo sed.