THE ENHANCED FIELD-EMISSION FROM MICROTIPS COVERED BY ULTRATHIN LAYERS

The influence of different types of covering on electron field emissio n from silicon tips has been studied. For this a series of silicon tip array structures, namely (i) structures with porous silicon layers on the tops of the tips, (ii) tips covered with carbon films, (iii) sili con tips implanted by hydrogen, and (iv) cesium-enriched silicon tips, has been prepared and investigated. The comparison and characterizati on of various structures using effective work functions, field enhance ment factors, and effective emission areas obtained from Fowler-Nordhe im plots have been performed. Models and mechanisms of enhancement of the electron field emission have been proposed.