The electronic conduction mechanism in barium strontium titanate thin films

Citation
S. Zafar et al., The electronic conduction mechanism in barium strontium titanate thin films, APPL PHYS L, 73(24), 1998, pp. 3533-3535
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
24
Year of publication
1998
Pages
3533 - 3535
Database
ISI
SICI code
0003-6951(199812)73:24<3533:TECMIB>2.0.ZU;2-C
Abstract
In the literature, the Schottky emission equation is widely used to describ e the conduction mechanism in perovskite-type titanate thin films. Though t he equation provides a good fit to the leakage current data, the extracted values of the Richardson and dielectric constants are inconsistent with the ir experimental values. In this work, a modified Schottky equation is appli ed. This equation resolves the difficulties associated with the standard Sc hottky equation. Also, the electronic mobility in thin films of barium stro ntium titanate is reported. (C) 1998 American Institute of Physics. [S0003- 6951(98)00650-0].