Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification andpulsed laser epitaxial TiN deposition

Authors
Iliadis, AA Andronescu, SN Edinger, K Orloff, JH Vispute, RD Talyansky, V Sharma, RP Venkatesan, T Wood, MC Jones, KA
Citation
Aa. Iliadis et al., Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification andpulsed laser epitaxial TiN deposition, APPL PHYS L, 73(24), 1998, pp. 3545-3547
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
24
Year of publication
1998
Pages
3545 - 3547
Database
ISI
SICI code
0003-6951(199812)73:24<3545:OCTPUF>2.0.ZU;2-5
Abstract
The development of low-resistance Ohmic metallizations to p-type 6H-SiC, us ing a focused ion-beam (FIB)-Ga surface-modification and ex situ pulsed las er (PLD) epitaxial TiN deposition without further annealing, is reported. T he FIB-Ga surface-modification and PLD epitaxial TiN metallizations showed a minimum value of contact resistance of 4.4 X 10(-5) Ohm cm(2) at an ion d ose and energy of 5.0 X 10(16) ions/cm(2) and 20 keV, respectively. Auger a nalysis data indicated well-defined interfaces between the metal and the se miconductor, and a significant subsurface Ga concentration. (C) 1998 Americ an Institute of Physics. [S0003-6951(98)01450-8].