Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence

In this letter, we describe the hot-electron-injection-induced 2.7 eV lumin escence centers and the interfacial stress dependence of the 2.7 eV cathodo luminescence peak buildup in SiO2-Si structures. The results suggest that e lectrical stress may relax the interface strain and modulate the radiation sensitivity. This phenomenon may be extended to provide a nonelectrical and physical evaluation of the electrical stress degradation of SiO2-Si struct ures. Possible mechanisms are proposed to explain the observations. (C) 199 8 American Institute of Physics. [S0003-6951(98)01950-0].