SURFACE AND NEAR-SURFACE STRUCTURE AND COMPOSITION OF HIGH-DOSE IMPLANTED AND ELECTRON-BEAM ANNEALED SINGLE-CRYSTAL COPPER

Cu(111),(100) single crystals implanted with Ti up to 8 x 10(17) cm(-2 ) followed by high-current electron beam annealing (HCEB) have been in vestigated by means of transmission electron microscopy (TEM), Rutherf ord back-scattering (RBS), nuclear reaction elastic resonance (NRER) a nd scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure a fter Ti implantation became multi-component, It was found that this la yer included a surface amorphous carbon him, a layer consisting of TiC , a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170-180 nm. A small-angle disorientati on up to 5 degrees between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2-4 nm. The Cu structure essentially changed. The Cu laye r contacting the carbide became a nano-dimensional substructure with a n average crystallite size of 50-70 nm. At a depth of 0.1 mu m the Cu structure is represented as a disoriented striped substructure: the di screte disorientation between the stripes was about 6-7 degrees. Net d islocation substructure was observed inside the stripes, the dislocati on scalar density of which was [p] = 5.2 x 10(10) cm(-2).