Persistent tris(t-butyldimethylsilyl)silyl radical and its new generation methods

Authors
Kira, M Obata, T Kon, I Hashimoto, H Ichinohe, M Sakurai, H Kyushin, S Matsumoto, H
Citation
M. Kira et al., Persistent tris(t-butyldimethylsilyl)silyl radical and its new generation methods, CHEM LETT, (11), 1998, pp. 1097-1098
Citations number
20
Categorie Soggetti
Chemistry
Journal title
CHEMISTRY LETTERS
ISSN journal
03667022 → ACNP
Issue
11
Year of publication
1998
Pages
1097 - 1098
Database
ISI
SICI code
0366-7022(199811):11<1097:PTRAIN>2.0.ZU;2-9
Abstract
A persistent silyl radical, tris(t-butyldimethylsilyl)silyl radical, (t-BuM e2Si)(3)Si . (1), was produced by two new methods in addition to a conventi onal hydrogen abstraction from the corresponding hydrosilane: one-electron oxidation of (t-BuMe2Si)(3)SiNa (2) by NO+BF4- and one-electron reduction o f (t-BuMe2Si)(3)SiBr (3) by sodium.