Orthogonal alignment InAs islands formation on GaAs tensile strained layergrown on (001) InP substrate by low pressure metal-organic chemical vapor deposition

Nucleation control is one of the key questions in quantum dots preparation and application. This paper reports the experimental results of orthogonal alignment InAs islands formed on (001) InP substrate by low-pressure metal- organic chemical vapor deposition. As a nucleation control layer, the tensi le strained GaAs epilayer with orthogonal trench structure was grown firstl y on (001) InP substrate under Stranski-Krastanov growth mode. Then, the In As islands were grown selectively on the trench edges by using strain effec t. This growth technique results in the formation of orthogonal alignment I nAs islands without any preprocessing technique prior to the growth.