Detailed conditions of the fabrication of devices by SPM ultrafine oxidatio
n are discussed and a new process is conceived for reducing the surface rou
ghness compared with the conventional process. A single electron transistor
(SET) with a side gate electrode is fabricated on an ultrathin Ti film dep
osited on an SiO2/Si substrate. Current oscillation with gate voltage is cl
early observed for the first time in a Ti-based SET. (C) 1998 Scripta Techn
ica, Electron Comm Jpn Pt 2, 81(10): 12-18, 1998.