Single electron transistors fabricated with AFM ultrafine nanooxidation process

Authors
Miyakawa, S Kim, R Shirakashi, J Taniguchi, K Matsumoto, K Kamakura, Y
Citation
S. Miyakawa et al., Single electron transistors fabricated with AFM ultrafine nanooxidation process, ELEC C JP 2, 81(10), 1998, pp. 12-18
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
81
Issue
10
Year of publication
1998
Pages
12 - 18
Database
ISI
SICI code
8756-663X(199810)81:10<12:SETFWA>2.0.ZU;2-G
Abstract
Detailed conditions of the fabrication of devices by SPM ultrafine oxidatio n are discussed and a new process is conceived for reducing the surface rou ghness compared with the conventional process. A single electron transistor (SET) with a side gate electrode is fabricated on an ultrathin Ti film dep osited on an SiO2/Si substrate. Current oscillation with gate voltage is cl early observed for the first time in a Ti-based SET. (C) 1998 Scripta Techn ica, Electron Comm Jpn Pt 2, 81(10): 12-18, 1998.