Characterization of the crystalline quality on GaN on sapphire and ternaryalloys

The growth of GaN on sapphire by OMVPE using a low-temperature deposited bu ffer layer was characterized by in situ TEM observation. The crystalline qu ality, especially tilting and twisting of the mosaic GaN crystal, was chara cterized by conventional X-ray diffraction together with grazing-incidence X-ray diffraction. Strain and relaxation of the AlGaN and GaInN on GaN were also characterized by asymmetrical X-ray diffraction. (C) 1998 Scripta Tec hnica, Electron Comm Jpn Pt 2, 81(10): 48-54, 1998.