Gate-induced spin precession in an In0.53Ga0.47As two dimensional electrongas

We report a study of the gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas, using a Monte-Carlo transport model. The prec ession vector originates from the spin-orbit coupling existing at a III-V h etero-interface, usually denoted as Rashba interaction. Contrary to the cas e of a one dimensional electron gas, the precession vector is randomized by the scattering events, which leads to a non negligible loss of spin cohere nce for an initially spin-polarized electron population moving along a cond uction channel. However, we show that by operating at the liquid nitrogen t emperature, or by reducing the channel width to a value close to 0.1 mu m, the gate-controlled spin-polarization remains high enough to enable the inv estigation of the physics of spin-related phenomena in a ferromagnet/semico nductor structure.