Investigation on base surface recombination in self passivated GaAlAs/GaInP/GaAs heterojunction bipolar transistor

Authors
Bourguiga, R Sik, H Scavennec, A
Citation
R. Bourguiga et al., Investigation on base surface recombination in self passivated GaAlAs/GaInP/GaAs heterojunction bipolar transistor, EPJ-APPL PH, 4(1), 1998, pp. 27-29
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
4
Issue
1
Year of publication
1998
Pages
27 - 29
Database
ISI
SICI code
1286-0042(199810)4:1<27:IOBSRI>2.0.ZU;2-S
Abstract
The dependence of the current gain with the size of the emitter-base juncti on of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HB T) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold r eduction of the surface recombination in the extrinsic base region with res pect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.