An EBIS/T with integrated Penning trap

A special problem in atomic physics research with highly charged ions is to prepare ions with a unique charge state inside of EBIS or EBIT devices. On the other hand, there are great losses resulting from the transport of the ions from the source to an external trap. Therefore we are setting up an E BIS/T with internal Penning trap. This new set-up will be able to study ele ctron-ion interaction with well-defined initial and final charge states, di stinguishing between single step successive ionisation and multiple step io nisation of charge states similar to the crossed beams method but for much higher charge states. Another feature of this system is to determine with h igh precision the ion charge state distribution in the EBIS/T by applicatio n of Fourier Transform Ion Cyclotron Resonance F-ICR). This method allows t he on-line monitoring of the ion distribution and the evolution of the char ge state population together with its dependence on the degree of space cha rge compensation of the electron beam in the EBIS/T. It will be possible to study ion dynamics in compensated space charge potentials. In case of high homogeneity of the magnetic field in the trap region, experiments may be c onsidered to measure directly binding energies of highly-charged ions and o ther topics of high resolution mass spectroscopy.