4- and 13-GHz tuned amplifiers implemented in a 0.1-mu m CMOS technology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scal ed 0.1-mu m CMOS technology on bulk, silicon-on-insulator (SOI), and silico n-on-sapphire (SOS) substrates, The 4-GHz hulk, SOI, and SOS amplifiers exh ibit forward gains of 14, 11, and 12.5 dB and F-min's of 4.5 (bulk) and 3.5 dB (SOS), The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F-min's of 4.9 and 7.8 dB, The 4-GHz bulk amplifier has the highest re sonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequen cies greater than 10 GHz, These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0 .1-mu m CMOS process.