POLYSILICON ENCAPSULATED LOCAL OXIDATION OF SILICON FOR DEEP-SUBMICRON LATERAL ISOLATION

In this paper it will be shown that polysilicon encapsulated local oxi dation of silicon (PE-LOCOS) is a feasible lateral isolation technique for quarter-micron or smaller complementary metal-oxide-semiconductor (CMOS) technologies. This isolation technique features limited proces s complexity and very good manufacturability and reproducibility, toge ther with excellent bird's beak and active area dimension control. Ele ctrical measurements performed on perimeter intensive gate oxide capac itors and diodes show no isolation-edge-related degradation; which is confirmed by Raman spectroscopy and emission microscopy measurements. Transistor narrow-channel data from devices fabricated with PE-LOCOS a re presented and discussed.