Disorder effect on the physical properties of Sb-S thin films

Authors
Citation
Ik. El Zawawi, Disorder effect on the physical properties of Sb-S thin films, I J PA PHYS, 36(9), 1998, pp. 519-522
Citations number
13
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
36
Issue
9
Year of publication
1998
Pages
519 - 522
Database
ISI
SICI code
0019-5596(199809)36:9<519:DEOTPP>2.0.ZU;2-X
Abstract
Sb-S Films were prepared by thermal evaporation at vacuum of 10(-5) torr an d at the temperature of 300 K. The deposition rate of films was varied from 4 to 121 Angstrom. After the heat treatment the film prepared at R = 34 An gstrom/s showed well defined crystallites while the film prepared at R = 12 1 Angstrom showed many cracks observed all over the film surface. At the hi gher rate of deposition one is close to the stoichiometric compound but tha t is not the main factor affecting the quality of the deposited amorphous t hin film material.