Electrical and optical characterization of amorphous GeSe2 chemically modified with Cd

Authors
Citation
K. Sedeek, Electrical and optical characterization of amorphous GeSe2 chemically modified with Cd, I J PA PHYS, 36(8), 1998, pp. 454-457
Citations number
16
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
36
Issue
8
Year of publication
1998
Pages
454 - 457
Database
ISI
SICI code
0019-5596(199808)36:8<454:EAOCOA>2.0.ZU;2-S
Abstract
The electrical and optical properties of amorphous GeSe2 and Ge(0.9)7Se(2)C d(0.03) films have been investigated. Cd incorporation affects greatly the thermal activation energy and the pre-exponential factor but has little eff ect on the optical gap. The results are discussed in terms of the effect of Cd atoms oil the anion homopolar bond states at raft edges.