Characteristics of electrical switching in bulk indium telluride semiconducting glasses

Electrical switching of the memory type has been observed in InxTe100-x, bu lk glasses under lower electric fields than in corresponding thin films. Th e dependence of threshold electric field on composition as well as temperat ure has been investigated. The threshold field increases with indium conten t, but decreases with temperature. The results have been explained on the b asis of the electrothermal model. The temperature for steady state breakdow n has been determined for the stoichiometric glass and is in good agreement with the corresponding thin film values. The variation of threshold voltag e with thickness of the sample is linear in bulk samples as well as in thin films, but one cannot be extrapolated to get the other.