A NOVEL OPTICAL ADAPTIVE NEURO-DEVICE USING A SPLIT-GATE MOS-TRANSISTOR

An optical adaptive neuro-device in which a split-gate MOS transistor is used to generate and inject hot electrons is presented. The propose d adaptive neuro-device has been fabricated by a double poly Si n-chan nel MOS process, and its operation has been experimentally verified. I t has also been successfully applied to a synaptic connection circuit keeping the sum of synaptic weights in a neuron constant with time. Si nce it occupies much less area than previous adaptive neuro-devices ba sed on electron tunneling and possesses promising characteristics, thi s device may be suitable as a fundamental synaptic connection device f or the hardware implementation of large-scale artificial neural networ ks.