LOW DIELECTRIC-CONSTANT INSULATOR FORMED BY DOWNSTREAM PLASMA CVD AT ROOM-TEMPERATURE USING TMS O-2/

The present an insulator with a dielectric constant lower than 3.0, th ermal stability up to 500 degrees C and good gap-filling characteristi cs. This insulator was formed by downstream plasma chemical vapor depo sition (CVD) at room temperature using tetra-methylsilane (TMS)/O-2 ga ses. It contained a large amount of water in the as-deposited state. A nnealing at 350 degrees C resulted in a decrease in the water content of the insulator, and the insulator did not absorb water after the ann ealing. The film is constructed from Si-O and Si-CH3 bonds, which prod uce a low dielectric constant and high thermal stability.