0.8-MU-M CMOS PROCESS COMPATIBLE 60V-100M-OMEGA-CENTER-DOT-MM(2) POWER MOSFET ON BONDED SOI

In the present paper, we propose high voltage lateral power metal-oxid e-semiconductor field effect transistor (MOSFET) on silicon on insulat or (SOI), using the pure 0.8 mu m complementary metal-oxide-semiconduc tor (CMOS) processes without diffusion self-alignment. The measured sp ecific on-resistance of the developed lateral power n-channel MOSFET ( NMOSFET) was 100 m Ohm.mm(2) and breakdown voltage was 60 V. The fabri cated device attains its on-resistance comparable to that of diffusion self-align MOSFET (DMOSFET). It also achieves high side switch operat ion by a reasonable cost, and can be integrated with Bipolar CMOS (BiC MOS) circuits and micro processing unit (MPU). Compatibility of the de veloped MOSFET to these low voltage circuits are demonstrated. Further more, we show that the MPUs and BiCMOS analog circuit on SOI is suitab le for high temperature operation.