ANALYSIS OF THE THRESHOLD VOLTAGE ADJUSTMENT AND FLOATING BODY EFFECTSUPPRESSION FOR 0.1-MU-M FULLY DEPLETED SOI-MOSFET

The short channel effect for the fully depleted silicon-on-the-insulat or metal-oxide-silicon field-effect-transistor (SOI-MOSFET) is analyze d based on a simple analytical model (capacitance network model). It i s found that the origin of the short channel effect can be separated i nto two components. One is the potential modification due to the elect ric field between the gate electrode and S/D (source and the drain ele ctrode), and the other is the degradation in the vertical component of the electric field of the acceptor. The capacitance network model con sidering the above two components explains the short channel effect do wn to the 0.1 mu m regime. The dopant concentration required to adjust threshold voltage is also given by this model. Moreover, based on the above analysis, a new structure to reduce the short channel effect wi th suppressing the Boating body effect is proposed.