A PROPOSED ATOMIC-LAYER-DEPOSITION OF GERMANIUM ON SI SURFACE

A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exp osures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentall y that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.