A NEW MODEL SILICON SILICON OXIDE INTERFACE SYNTHESIZED FROM H10SI10O15 AND SI(100)-2X1/

Authors
ZHANG KZ MEEUWENBERG LM HOLL MMB MCFEELY FR
Citation
Kz. Zhang et al., A NEW MODEL SILICON SILICON OXIDE INTERFACE SYNTHESIZED FROM H10SI10O15 AND SI(100)-2X1/, JPN J A P 1, 36(3B), 1997, pp. 1622-1626
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
3B
Year of publication
1997
Pages
1622 - 1626
Database
ISI
SICI code
Abstract
A model silicon/silicon oxide interface, synthesized from the spherosi loxane H10Si10O15 and Si(100)-2x1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoem ission. In addition, the intact H10Si10O15 cluster was condensed at -1 60 degrees C onto Si(111)-H and characterized. The measured photoemiss ion features are in good agreement with the results of previous model studies.