DUAL-GATE SHORTED ANODE SOI LATERAL INSULATED GATE BIPOLAR-TRANSISTORSUPPRESSING THE SNAP-BACK

A new dual gate shorted anode silicon on insulator (SOI) lateral insul ated gate bipolar transistor (LIGBT), which suppresses effectively the snap back without sacrificing the forward voltage drop, the switching speed and the breakdown voltage, is proposed and verified by numerica l simulation. The numerical simulation results show that the snap-back is reduced less than the anode voltage of 2.5 V while the snap-back o ccurs at anode voltage of about 4 V for the conventional structure wit h the drift length of 35 mu m. We have verified that the snap-back is suppressed due to the enhancement of the hole injection and investigat ed the snap-back as a function of the device parameters such as the n( -) drift region doping concentration and drift region length.