COULOMB-BLOCKADE EFFECTS IN EDGE QUANTUM-WIRE SOI MOSFETS

Edge quantum wire MOSFETs were fabricated using the sidewall of an ult rathin SOI, and the electrical characteristics were investigated. In t his device, current oscillations for gate voltage sweeping were clearl y observed at 4.2 K. This effect is considered from the viewpoint of t he Coulomb oscillations in the multijunction system on the edge quantu m wire. Furthermore, we focus on two concerns regarding the applicatio n of the single electron tunneling (SET) devices. One concern is the p hase instability of the Coulomb oscillations due to trapped or Boating charges around the SET devices. To overcome this problem, we propose a double-gate edge SOI MOSFET. In fact, it is experimentally confirmed that the Coulomb oscillation phase is tunable. The other concern is t he low driving capability of SET devices. To improve this, it has also been experimentally demonstrated that the direct transmission of SET signals to the conventional MOSFET current is possible. This means tha t the output impedance can be transformed locally or globally from hig h to low in the SET-device circuits hybridized with CMOS devices.