Ionized cluster beam deposition (ICBD) has been employed to fabricate
high-purity crystalline polyimide (PI) thin films. X-ray photoemission
spectroscopy, transmission electron microscopy, glancing-incidence X-
ray diffraction, and atomic force microscopy studies show that the str
ucture and properties of PI films are very sensitive to the deposition
conditions such as the cluster acceleration voltage (V-a) and the ion
ization voltage (V-e). At optimum conditions of V-a = 800 V and V-e =
200 V, the PI films have a maximum imidization, negligible amount of i
mpurity (similar to 1% of isoimide), and a good crystalline structure
probably due to the high surface migration energy, and the surface cle
aning effect. It was also found that the surface morphology and the ad
hesion properties could be improved by ICBD.