LUMINESCENT PROPERTIES OF ZNXSR1-XS-CE THIN-FILM PHOSPHORS FOR ELECTROLUMINESCENT DEVICES

The dependence of the luminescent properties of Ce-doped ZnxSr1-xS thi n films on composition and annealing temperature is investigated. It h as been found that the emission intensity of Ce3+ photoluminescence is enhanced by the incorporation of an optimum amount of Zn and by the i ncrease of the post-annealing temperature. The luminescent intensity d epends strongly on the crystallinity of the films and on the valence s tate of Ce ions. Fabrication of electroluminescent devices introducing ZnxSr1-xS as a host material has been attempted.