EXTREMELY FLAT INTERFACES IN INXGA1-XAS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

Effectively atomically flat interfaces over a macroscopic area (super- flat interfaces) have been achieved in pseudomorphic InxGa1-xAs/Al0.3G a0.7As (x = 0.0, 0.04, 0.07) quantum wells (QWs) with well widths (L(w )) of 1.2-11.8nm grown on (411)A GaAs substrates at 520 degrees C by m olecular beam epitaxy (MBE). A single, sharp photoluminescence (PL) pe ak was observed for each QW over the large area of the wafer (8 mm x 5 mm). The linewidths for narrow QWs (L(w) = 2.4 nm) were 8.9 meV (x = 0.04) and 9.9 meV (x = 0.07) at 4.2 K, which were about 30% smaller th an those of QWs simultaneously grown on conventional (100) GaAs substr ates.