CHARACTERIZATION OF GAINAS INP TRIPLE-BARRIER RESONANT-TUNNELING DIODES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY FOR HIGH-TEMPERATURE ESTIMATION OF PHASE COHERENT LENGTH OF ELECTRONS/

To estimate the phase coherent length (L(C)) of electrons in semicondu ctor, triple-barrier resonant tunneling diodes (TBRTDs) with GaInAs/In P heterostructures were fabricated by using organo-metallic vapor phas e epitaxy (OMVPE). The current density-voltage (J-V) characteristics w ere measured at 4.2 K and 77 K. Moreover method of comparison between experimental and theoretical results is proposed. By comparing experim ental result with theoretical result, the coherent lengths are estimat ed to be longer than 90 nm and 55 nm at 4.2 K and 77 K respectively.