HIGH-POWER 650-NM-BAND ALGAINP VISIBLE LASER-DIODES FABRICATED BY REACTIVE ION-BEAM ETCHING USING CL-2 N-2 MIXTURE/

High-power 650-nm-band AlGaInP visible laser diodes having stable fund amental-transverse-mode at high temperatures were produced using elect ron cyclotron resonance reactive ion beam etching (ECR-RIBE). Epilayer s were etched using a Cl-2/N-2 mixture gas, resulting in very smooth s urfaces and symmetric laser mesas. Lasers that are 700-mu m-long and 6 %/80% coated were fabricated. The typical threshold current of these d evices was as low as 46 mA at room temperature, and a stable fundament al-mode operation over 30 mW is obtained up to 70 degrees C. The laser s operated for over 1000 h at 60 degrees C under an output power of 25 mW, and their degradation rate was as low as lasers fabricated by the ordinary wet etching process.