Dependence of the electron irradiation induced decomposition of cadmium chloride thin films on the beam energy dissipation profile

Authors
Citation
Cj. Aidinis, Dependence of the electron irradiation induced decomposition of cadmium chloride thin films on the beam energy dissipation profile, J APPL PHYS, 84(12), 1998, pp. 6667-6672
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
84
Issue
12
Year of publication
1998
Pages
6667 - 6672
Database
ISI
SICI code
0021-8979(199812)84:12<6667:DOTEII>2.0.ZU;2-M
Abstract
The influence of primary beam energy and film thickness on decomposition by uniform electron irradiation of vacuum deposited thin films of cadmium chl oride on silicon substrates has been studied for primary beam energies from 1 to 5 keV. Remaining film thickness versus dose measurements, obtained by ellipsometry, are compared to a theoretically derived model. This model is based on a steady state solution of the continuity equation for beam gener ated excess carriers within the thin film with a carrier generating functio n proportional to the Gaussian approximation for the rate of energy dissipa tion versus depth function. The proportionality constant is equal to the en ergy of formation of an electron-hole pair. The variation of the rate of en ergy dissipation with depth is derived from Monte Carlo calculations. The p rinciple of scaling is shown to apply when energy loss is normalized with r espect to the primary beam energy and depth with respect to the Bethe range . An energy-independent, universal thickness-versus-dose curve is proposed in view of the application of this material as an electron beam resist. (C) 1998 American Institute of Physics. [S0021- 8979(98)06023-X].