Modified compensation model of CdTe

Citation
M. Fiederle et al., Modified compensation model of CdTe, J APPL PHYS, 84(12), 1998, pp. 6689-6692
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
84
Issue
12
Year of publication
1998
Pages
6689 - 6692
Database
ISI
SICI code
0021-8979(199812)84:12<6689:MCMOC>2.0.ZU;2-H
Abstract
The traditional compensation model to explain the high resistivity properti es of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used to gether with an appropriate segregation model to calculate axial distributio ns of resistivity which are compared with spatially resolved resistivity me asurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculatio ns. (C) 1998 American Institute of Physics. [S0021-8979(98)02224-5].