ELECTRICAL-PROPERTIES OF AL AL2O3/(BA,RB)BIO3/SRTIO3(NB) 3 TERMINAL DEVICE/

Authors
TODA F YAMADA T HASHIMOTO K ABE H
Citation
F. Toda et al., ELECTRICAL-PROPERTIES OF AL AL2O3/(BA,RB)BIO3/SRTIO3(NB) 3 TERMINAL DEVICE/, JPN J A P 1, 36(3B), 1997, pp. 1990-1993
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
3B
Year of publication
1997
Pages
1990 - 1993
Database
ISI
SICI code
Abstract
A three terminal device with the Al/Al2O3/(Ba, Rb)BiO3/Nb-doped SrTiO3 structure was fabricated using a superconducting base layer. The stab le interface between (Ba,Rb)BiO3 and the artificial oxide barrier was obtained using in situ Al2O3 deposition. The output characteristics we re measured as functions of input current. A current gain greater than 2 was obtained in the common emitter configuration.